An Optimal Switching Pattern for “SiC+Si” Hybrid Device based Voltage Source Converters
SiC and Si Hybrid device
,
SiC Mosfet
,
SiC JFET
,
switching pattern
,
high efficiency
In this paper, a new type of high-efficiency hybrid switching device with parallel connection of SiC and Si active switches, such as “SiC JFET +…
New Electrical Overstress and Energy Loss Mechanisms in GaN Cascodes
Sandeep R. Bahl ; Michael D. Seeman
GaN
,
Gallium Nitride
,
Power Transistors
,
Power Conversion
,
Power Loss
Depletion-mode Gallium Nitride Field-Effect Transistors need to be cascoded with a low-voltage enhancement-mode Si FET in order to satisfy…
New Single-Bias All-Optical ETO Configuration for a 15 kV-100A SiC Thyristor Eliminating the Turn-on Leakage Current
Hossein Riazmontazer ; Alireza Mojab ; Arash Rahnamaee ; Siamak Mehrnami ; Sudip K. Mazumder ; Milos Zefran
Emitter turn-off (ETO)
,
Thyristor
,
SiC
In this paper a new single-bias optically-triggered (OT) emitter-turn-off (ETO) configuration for a 15kV-100A SiC thyristor is outlined. In…
Online Junction Temperature Measurement using Peak Gate Current
Nick Baker ; Stig Munk-Nielsen ; Francesco Iannuzzo ; Marco Liserre
Junction Temperature
,
Measurement
,
IGBT
,
MOSFET
,
Reliability
,
Semiconductor Devices
A new method for online junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method…
Photonic Power Electronics: Past, Present, and Future
Photonics
,
power semiconductor devices
,
optical control
In this paper, recent work related to optically-switched power semiconductor devices has been outlined. In addition, an outline on optical…
The Next Generation 1200V Trench Clustered IGBT Technology with Improved Trade-Off Relationship
Hong Yao Long ; Mark R. Sweet ; Maria Merlyne De Souza ; Ekkanath Madathil Sankara Narayanan
Power devices
,
IGBT
,
CIGBT
In this paper, the characteristics of the next generation of 1200V trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) in Non Punch…
Unified Theory of Reverse Blocking Dynamics in High-Voltage Cascode Devices
Jaume Roig ; Filip Bauwens ; Abhishek Banerjee ; Woochul Jeon ; Alexander Young ; Jason McDonald ; Balaji Padmanabhan ; Charlie Liu
HEMT
,
cascode
,
GaN devices
,
reverse blocking
This paper investigates the dynamic evolution of the internal voltages in cascode-based high-voltage devices under reverse blocking mode. For…
