A Gate Drive Circuit with Mid-Level Voltage for GaN Transistors in a 7-MHz Isolated Resonant Converter
Zhou Dong ; Zhiliang Zhang ; Xiaoyong Ren ; Xinbo Ruan ; Yan-Fei Liu
GaN transistor
,
gate driver
,
resonant converter
,
ZVS
This paper analyzes the drive requirements of Gallium Nitride (GaN) power transistor as control FET in resonant converters in the range of…
A Self-Powered Ultra-Fast DC Solid State Circuit Breaker using a Normally-on SiC JFET
Zhenyu Miao ; Gourab Sabui ; Aozhu Chen ; Yan Li ; Z. John Shen ; Jun Wang ; Zhikang Shuai ; An Luo ; Xin Yin ; Mengxuan Jiang
Wide bandgap semiconductor
,
solid state circuit breaker
,
power devices
This paper introduces a new self-powered solid state circuit breaker (SSCB) concept using a normally-on SiC JFET as the main static switch…
Active Gate Driver for Fast Switching and Cross-Talk Suppression of SiC Devices in a Phase-Leg Configuration
Zheyu Zhang ; Fred Wang ; Leon M. Tolbert ; Benjamin J. Blalock ; Daniel J. Costinett
Active Gate Driver
,
Fast Switching
,
Cross Talk Suppression
,
SiC
This paper presents an active gate driver for Silicon Carbide (SiC) devices to fully utilize their potentials of high switching-speed capability…
Closed-Loop Control of Switching Transition of SiC MOSFETs
Hossein Riazmontazer ; Arash Rahnamaee ; Alireza Mojab ; Siamak Mehrnami ; Sudip K. Mazumder ; Milos Zefran
Gate drive
,
SiC
,
active gate control
This paper presents a novel closed-loop active gate driver for high-voltage SiC MOSFETs. The proposed controller independently adjusts the…
Effectively Paralleling Gallium Nitride Transistors for High Current and High Frequency Applications
GaN
,
Paralleling
,
Wide Bandgap
GaN based power devices are being adopted for their ability to operate at switching frequencies beyond the capability of silicon power…
Evaluation of 1.2 kV, 100A SiC Modules for High-Frequency, High-Temperature Applications
Andrew Lemmon ; Ryan Graves ; James Gafford
Silicon Carbide
,
module
,
high-temperature
,
high-frequency
,
gate-drive
Cumulative advances in substrate quality and device manufacturing yields over the past few years have paved the way for the commercial…
GaN-based High Frequency Totem-Pole Bridgeless PFC Design with Digital Implementation
Lingxiao Xue ; Zhiyu Shen ; Dushan Boroyevich ; Paolo Mattavelli
GaN
,
Power Factor Correction
,
Bidirectional
,
Zero crossing
,
Totem-Pole Bridgeless
,
Modulator
Totem-pole bridgeless PFC is a very promising topology for GaN devices because of very low reverse recovery. However, inherent challenges…
Loss Analysis During Dead Time and Thermal Study of Gallium Nitride Devices
GaN FETs
,
body diodes
,
reverse conduction loss
,
thermal study
,
resonant converter
By virtue of the advantages in breakdown field strength and saturated electron speed, gallium nitride field-effect transistors (GaN FETs)…
Paralleling GaN HEMTs for Diode-Free Bridge Power Converters
Zhan Wang ; Yifeng Wu ; Jim Honea ; Liang Zhou
GaN
,
HEMT
,
leaded package
,
Parallel
,
bridge
GaN devices have superior performance over Si-based devices, and high voltage normally-off GaN HEMTs with cascode structure have been…
